In this study, a proposed Microwave-Induction Heating (MIH) scheme has been\nsystematically studied to acquire suitable MIH parameters including chamber pressure, microwave\npower and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal\nbelow the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated\nITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the\nattenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal\nconditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When\nsuitable MIH parameters were used, the effect of PVP cross-linking and the device performance\nwere similar to those obtained using traditional oven heating, even though the cross-linking time\nwas significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap\nstate density (Nit) was also calculated to describe the interface status between the gate insulator and\nthe active layer. The lowest interface trap state density can be found in the device with the PVP\ngate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the\nMIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor\napplications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation\n(50 W).
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